| PART |
Description |
Maker |
| K9K8G08U1E |
4Gb E-die NAND Flash
|
Samsung
|
| K9HDG08U5A K9GBG08U0A K9LCG08U1A |
32Gb A-die NAND Flash
|
Samsung
|
| KBY00U00VA-B450 |
8Gb DDP (512M x16) NAND Flash 4Gb (64M x32 64M x32) 2/CS
|
Samsung semiconductor
|
| HMT425S6MFR6C HMT425S6MFR6C-G7 HMT425S6MFR6C-H9 HM |
DDR3 SDRAM Unbuffered SODIMMs Based on 4Gb M-die
|
Hynix Semiconductor
|
| HMT451U7AFR8A-H9 HMT451U7AFR8A-G7 HMT451U6AFR8A-PB |
DDR3L SDRAM Unbuffered DIMMs Based on 4Gb A-Die
|
Hynix Semiconductor
|
| HMT82GV7MMR4A HMT82GV7MMR4A-G7 HMT82GV7MMR4A-H9 HM |
DDR3L SDRAM VLP Registered DIMM Based on 4Gb M-die
|
Hynix Semiconductor
|
| HMT351U7CFR8C-H9 HMT351U7CFR8C-RD HMT351U7CFR8C-PB |
DDR3 SDRAM Unbuffered DIMMs Based on 2Gb C-Die
DDR3L SDRAM Unbuffered DIMMs Based on 4Gb M-Die
|
Hynix Semiconductor
|
| KM29W040AT KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory
512K x 8 bit NAND Flash Memory
|
Samsung semiconductor
Samsung Electronic
|
| TS2GMP650 |
2GB/4GB/8G USB Flash Drive
|
Transcend Information. Inc.
|
| AM29F010-1 AM29F010-120DGC1 AM29F010-120DGE1 AM29F |
1 megabit CMOS 5.0 volt-only, uniform sector flash memory- die revision 1
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash MemoryDie Revision 1
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 120 ns, UUC30
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 90 ns, UUC30
Evaluation Board for LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers 128K X 8 FLASH 5V PROM, 90 ns, UUC30
LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers; Package: MICRO SMD; No of Pins: 8
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only Uniform Sector Flash Memory-Die Revision 1
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory-Die Revision 1
|
ADVANCED MICRO DEVICES INC
PROM
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
